ISBN13: | 9781032638874 |
ISBN10: | 1032638877 |
Kötéstípus: | Keménykötés |
Terjedelem: | 172 oldal |
Méret: | 254x178 mm |
Súly: | 476 g |
Nyelv: | angol |
Illusztrációk: | 104 Illustrations, black & white; 104 Line drawings, black & white; 4 Tables, black & white |
694 |
A biológia általános kérdései
Analitikai kémia
Villamosmérnöki tudományok, híradástechnika, műszeripar
Folyadékok és szilárdtestek fizikája
Optika
Alkalmazott fizika
A biológia általános kérdései (karitatív célú kampány)
Analitikai kémia (karitatív célú kampány)
Villamosmérnöki tudományok, híradástechnika, műszeripar (karitatív célú kampány)
Folyadékok és szilárdtestek fizikája (karitatív célú kampány)
Optika (karitatív célú kampány)
Alkalmazott fizika (karitatív célú kampány)
Raman Scattering on Emerging Semiconductors and Oxides
GBP 89.99
Kattintson ide a feliratkozáshoz
A Prosperónál jelenleg nincsen raktáron.
Raman Scattering on Emerging Semiconductors and Oxides presents Raman scattering studies. It describes the key fundamental elements in applying Raman spectroscopies to various semiconductors and oxides without complicated and deep Raman theories.
Raman Scattering on Emerging Semiconductors and Oxides presents Raman scattering studies. It describes the key fundamental elements in applying Raman spectroscopies to various semiconductors and oxides without complicated and deep Raman theories.
Across nine chapters, it covers:
? SiC and IV-IV semiconductors,
? III-GaN and nitride semiconductors,
? III-V and II-VI semiconductors,
? ZnO-based and GaO-based semiconducting oxides,
? Graphene, ferroelectric oxides, and other emerging materials,
? Wide-bandgap semiconductors of SiC, GaN, and ZnO, and
? Ultra-wide gap semiconductors of AlN, Ga2O3, and graphene.
Key achievements from the author and collaborators in the above fields are referred to and cited with typical Raman spectral graphs and analyses. Written for engineers, scientists, and academics, this comprehensive book will be fundamental for newcomers in Raman spectroscopy.
Zhe Chuan Feng has had an impressive career spanning many years of important work in engineering and tech, including as a professor at the Graduate Institute of Photonics & Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei; establishing the Science Exploring Lab; joining Kennesaw State University as an adjunct professor, part-time; and at the Department of Electrical and Computer Engineering, Southern Polytechnic College of Engineering and Engineering Technology. Currently, he is focusing on materials research for LED, III-nitrides, SiC, ZnO, other semiconductors/oxides, and nanostructures and has devoted time to materials research and growth of III-V and II-VI compounds, LED, III nitrides, SiC, ZnO, GaO, and other semiconductors/oxides.
Professor Feng has also edited and published multiple review books in his field, alongside authoring scientific journal papers and conference/proceeding papers. He has organized symposiums and been an invited speaker at different international conferences and universities. He has also served as a guest editor for special journal issues.
Preface
Acknowledgements
Chapter 1 Introduction
Chapter 2 SiC and IV-IV semiconductors
Chapter 3 GaN semiconductors
Chapter 4 Other III-Nitride semiconductors
Chapter 5 III-V semiconductors
Chapter 6 II-VI semiconductors
Chapter 7 ZnO-based semiconductors
Chapter 8 GaO-based oxides and Graphene
Chapter 9 Ferroelectric oxides and others
References
Summary